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What is MSN7002Z?

This electronic component, produced by the manufacturer "MORESEMI", performs the same function as "N-Channel Enhancement Mode Power MOS FET".


MSN7002Z Datasheet PDF - MORESEMI

Part Number MSN7002Z
Description N-Channel Enhancement Mode Power MOS FET
Manufacturers MORESEMI 
Logo MORESEMI Logo 


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Total 4 Pages



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No Preview Available ! MSN7002Z datasheet, circuit

MSN7002Z
700V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
VDS =700V,ID =2A
RDS(ON) <6.5 @ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Lead Free
Application
Power switching application
Hard switched and high frequency circuits
Electronic ballast and transformer
PIN Configuration
Marking and pin assignment
TO-251 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package
MSN7002Z
MSN7002Z
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
700
±30
2
1.25
8
28
0.20
120
-55 To 150
Unit
V
V
A
A
A
W
W/
mJ
MORE Semiconductor Company Limited
http://www.moresemi.com
1/4


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MSN7002Z electronic component.


Information Total 4 Pages
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MSN7002The function is N-Channel Enhancement Mode Power MOS FET. MORESEMIMORESEMI
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MSN7002EThe function is N-Channel Enhancement Mode Power MOS FET. MORESEMIMORESEMI

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