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PDF MSN7002E Data sheet ( Hoja de datos )
| Número de pieza | MSN7002E | |
| Descripción | N-Channel Enhancement Mode Power MOS FET | |
| Fabricantes | MORESEMI | |
| Logotipo |  |
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MSN7002E
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 60V,ID = 0.3A
RDS(ON) < 3Ω @ VGS=5V
RDS(ON) < 2Ω @ VGS=10V
ESD Rating：HBM 2300V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD protected
Lead Free
Application
●Direct logic-level interface: TTL/CMOS
●Drivers: relays, solenoids, lamps, hammers,display,
memories, transistors, etc.
●Battery operated systems
●Solid-state relays
PIN Configuration
Marking and pin assignment
SOT-23 top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
MSN7002E
Device Package
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current (TJ =150℃)
Drain Current-Pulsed (Note 1)
TA =25℃
TA =100℃
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
VGS
ID
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
60
±20
0.3
0.19
0.8
0.35
-55 To 150
350
Unit
V
V
A
A
W
℃
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
1 page  
MSN7002E
Square Wave Pluse Duration(sec)
Figure 12 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MSN7002E.PDF ] | |
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