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PDF MSN0880H Data sheet ( Hoja de datos )
| Número de pieza | MSN0880H | |
| Descripción | N-Channel Enhancement Mode Power MOS FET | |
| Fabricantes | MORESEMI | |
| Logotipo |  |
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MSN0880H
75V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 75V,ID =80A
RDS(ON) <8mΩ @ VGS=10V（Typ：6.5mΩ）
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
PIN Configuration
Lead Free
Marking and pin assignment
TO-247 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0880H
MSN0880H
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Peak diode recovery voltage
ID
ID (100℃)
IDM
PD
dv/dt
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
75
±25
80
60
320
180
30
1.2
600
-55 To 175
Unit
V
V
A
A
A
W
V/ns
W/℃
mJ
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
1 page  
Figure7. BVDSS vs Junction Temperature
MSN0880H
Figure8. VGS(th) vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MSN0880H.PDF ] | |
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