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PDF MSN0860Z Data sheet ( Hoja de datos )
| Número de pieza | MSN0860Z | |
| Descripción | N-Channel Enhancement Mode Power MOS FET | |
| Fabricantes | MORESEMI | |
| Logotipo |  |
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MSN0860Z
75V(D-S) N-Channel Enhancement Mode Power MOS FET
Features
● VDS=75V；ID=60A@ VGS=10V；
RDS(ON)<8.5mΩ @ VGS=10V
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Lead Free
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
PIN Configuration
Marking and pin assignment
Schematic diagram
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0860Z
MSN0860Z
TO-251-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃)
Parameter
Drain-Source Voltage (VGS=0V）
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed (Note 1)
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25℃)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition：Tj=25℃,VDD=37.5V,VG=10V,L=0.5mH
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
TJ,TSTG
Value
75
±20
60
42
310
30
140
0.95
300
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
1 page  
Figure7. BVDSS vs Junction Temperature
MSN0860Z
Figure8. VGS(th) vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MSN0860Z.PDF ] | |
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