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PDF MSN0620Z Data sheet ( Hoja de datos )

Número de pieza MSN0620Z
Descripción N-Channel Enhancement Mode Power MOS FET
Fabricantes MORESEMI 
Logotipo MORESEMI Logotipo



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No Preview Available ! MSN0620Z Hoja de datos, Descripción, Manual

MSN0620Z
60V(D-S) N-Channel Enhancement Mode Power MOS FET
Genera Features
VDS =60V,ID =20A
RDS(ON) <44m@ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
PIN Configuration
Lead Free
Marking and pin assignment
TO-251 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0620Z
MSN0620Z
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100)
ID
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
IDM
PD
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
20
14
45
30
0.2
72
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6

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MSN0620Z pdf
MSN0620Z
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature()
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature()
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
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