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PDF TF412 Data sheet ( Hoja de datos )
| Número de pieza | TF412 | |
| Descripción | N-Channel JFT | |
| Fabricantes | ON Semiconductor | |
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Ordering number : EN*A2258
TF412
Advance Information
N-Channel JFT
30V, 1.2 to 3.0mA, 5.0mS, SOT-883
http://onsemi.com
Features
Small IGSS : max 1.0nA (VGS= 20V, VDS=0V)
Small Ciss : typ 4pF (VDS=10V, VGS=0V, f=1MHz)
Ultrasmall package facilitates miniaturization in end products
Halogen free compliance
Applications
Low-Frequency general-purpose amplifier,
impedance conversion, infrared sensor applications
Electrical Connection
3
1 : Source
2 : Drain
3 : Gate
1 2 Top view
Marking
Ordering & Package Information
Device
TF412T5G
Package
SOT-883
(Pb-Free / Halogen Free)
Shipping (Qty / Packing)
8000 / Tape & Reel
31
2
SOT-883
A2 M
M = Date Code
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Storage Temperature
Tstg
Value
30
30
10
10
TBD
50
55 to +150
Unit
V
V
mA
mA
mW
C
C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta 25C, VM = 7.2V
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
V(BR)GDS
IGSS
VGS(off)
IDSS
| yfs |
Ciss
Crss
IG = 10μA, VDS=0V
VGS = 20V, VDS=0V
VDS = 10V, ID = 1μA
VDS = 10V, VGS = 0V
VDS = 10V, VGS=0V, f = 1kHz
VDS = 10V, VGS = 0V, f = 1MHz
min
30
Value
typ
1.18
1.2
3.0
0.60
5.0
4
1.1
max
10
1.5
3.0
Unit
V
nA
V
mA
mS
pF
pF
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Semiconductor Components Industries, LLC, 2013
December, 2013
D1113HK No.A2258-1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet TF412.PDF ] | |
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