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PDF HMC1099 Data sheet ( Hoja de datos )
| Número de pieza | HMC1099 | |
| Descripción | Power Amplifier | |
| Fabricantes | Analog Devices | |
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Data Sheet
FEATURES
High saturated output power (PSAT): 40.5 dBm typical
High small signal gain: 18.5 dB typical
High power added efficiency (PAE): 69% typical
Instantaneous bandwidth: 0.01 GHz to 1.1 GHz
Supply voltage: VDD = 28 V at 100 mA
Internal prematching
Simple and compact external tuning for optimal
performance
32-lead, 5 mm × 5 mm, LFCSP package: 25 mm2
APPLICATIONS
Extended battery operation for public mobile radios
Power amplifier stage for wireless infrastructures
Test and measurement equipment
Commercial and military radars
General-purpose transmitter amplification
GENERAL DESCRIPTION
The HMC1099 is a gallium nitride (GaN), broadband power
amplifier delivering >10 W with up to 69% PAE across an
instantaneous bandwidth of 0.01 GHz to 1.1 GHz, and with a
±0.5 dB typical gain flatness.
The HMC1099 is ideal for pulsed or continuous wave (CW)
applications, such as wireless infrastructure, radars, public
mobile radios, and general-purpose amplification.
The HMC1099 amplifier is externally tuned using low cost,
surface-mount components and is available in a compact
LFCSP package.
Multifunction pin names may be referenced by their relevant
function only.
>10 W, GaN Power Amplifier,
0.01 GHz to 1.1 GHz
HMC1099
FUNCTIONAL BLOCK DIAGRAM
GND 1
NIC 2
NIC 3
RFIN/VGG 4
RFIN/VGG 5
NIC 6
NIC 7
GND 8
HMC1099
24 GND
23 NIC
22 NIC
21 RFOUT/VDD
20 RFOUT/VDD
19 NIC
18 NIC
17 GND
PACKAGE
BASE
NIC = NO INTERNAL CONNECTION. THESE PINS
ARE NOT CONNECTED INTERNALLY.
Figure 1.
Rev. A
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityisassumedbyAnalogDevices for itsuse,nor foranyinfringementsofpatentsor other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
HMC1099
Data Sheet
TA = 25°C, VDD = 28 V, IDD = 100 mA, frequency range = 0.7 GHz to 1.1 GHz.
Table 3.
Parameter
FREQUENCY RANGE
GAIN
Small Signal Gain
Gain Flatness
RETURN LOSS
Input
Output
POWER
Output Power for 4 dB Compression
Power Gain for P4dB Compression
Saturated Output Power
Power Gain for PSAT
Power Added Efficiency
OUTPUT THIRD-ORDER INTERCEPT
NOISE FIGURE
TOTAL SUPPLY CURRENT
Symbol Min Typ Max Unit
0.7 1.1 GHz
16.5 18.5
±0.5
dB
dB
12 dB
17 dB
P4dB
PSAT
PAE
IP3
IDD
41.5 dBm
14 dB
41.5 dBm
13.5 dB
69 %
47 dBm
5 dB
100 mA
Test Conditions/Comments
>10 W saturated output power
Measurement taken at POUT/tone = 30 dBm
Adjust the gate bias control voltage (VGG) between
−8 V to 0 V to achieve an IDD = 100 mA typical
TOTAL SUPPLY CURRENT BY VDD
Table 4.
Parameter
Symbol Min Typ
SUPPLY CURRENT IDD
VDD = 24 V
VDD = 28 V
100
100
Max Unit
mA
mA
Test Conditions/Comments
Adjust the gate bias control voltage (VGG) between −8 V to 0 V to achieve an
IDD = 100 mA typical
Rev. A | Page 4 of 16
5 Page 
HMC1099
65
1GHz
60 0.5GHz
0.1GHz
55
50
45
40
35
30
25
10 12 14 16 18 20 22 24 26 28 30 32
POUT/TONE (dBm)
Figure 23. Output Third-Order Intermodulation (IM3) vs.
POUT/TONE at VDD = 28 V
80 800
70 POUT
GAIN
PAE
60 IDD
700
600
50 500
40 400
30 300
20 200
10 100
00
0 4 8 12 16 20 24 28
INPUT POWER (dBm)
Figure 24. Power Output (POUT), GAIN, Power Added Efficiency (PAE), and
Total Supply Current (IDD) vs. Input Power at 0.5 GHz
90
80
70
60
50
40
30
20
+85°C
10 +25°C
–40°C
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
FREQUENCY (GHz)
Figure 25. Power Added Efficiency (PAE) vs. Frequency at
Various Temperatures
Data Sheet
90
80
POUT
GAIN
PAE
70 IDD
900
800
700
60 600
50 500
40 400
30 300
20 200
10 100
00
0 4 8 12 16 20 24 28
INPUT POWER (dBm)
Figure 26. Power Output (POUT), GAIN, Power Added Efficiency (PAE), and
Total Supply Current (IDD) vs. Input Power at 0.1 GHz
80 850
70 POUT
GAIN
PAE
60 IDD
750
650
50 550
40 450
30 350
20 250
10 150
0 50
0 4 8 12 16 20 24 28
INPUT POWER (dBm)
Figure 27. Power Output (POUT), GAIN, Power Added Efficiency (PAE), and
Total Supply Current (IDD) vs. Input Power at 1 GHz
0
–10
–20
–30
–40
–50
+85°C
–60 +25°C
–40°C
–70
0
0.2 0.4 0.6 0.8 1.0 1.2
FREQUENCY (GHz)
Figure 28. Reverse Isolation vs. Frequency at Various Temperatures
Rev. A | Page 10 of 16
11 Page | ||
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| PDF Descargar | [ Datasheet HMC1099.PDF ] | |
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