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PDF HMC1022 Data sheet ( Hoja de datos )

Número de pieza HMC1022
Descripción GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
Fabricantes Analog Devices 
Logotipo Analog Devices Logotipo



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Typical Applications
The HMC1022 is ideal for:
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
Functional Diagram
HMC1022
v00.0811
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 48 GHz
Features
High P1dB Output Power: 22 dBm
High Psat Output Power: 24 dBm
High Gain: 12 dB
High Output IP3: 32 dBm
Supply Voltage: +10 V @ 150 mA
50 Ohm Matched Input/Output
Die Size: 2.82 x 1.50 x 0.1 mm
General Description
The HMC1022 is a GaAs pHEMT MMIC Distrib-
uted Power Amplifier which operates between DC
and 48 GHz. The amplifier provides 12 dB of gain,
32 dBm output IP3 and +22 dBm of output power at
1 dB gain compression while requiring 150 mA from
a +10 V supply. The HMC1022 exhibits a slightly
positive gain slope from 10 to 35 GHz, making
it ideal for EW, ECM, Radar and test equipment
applications. The HMC1022 amplifier I/Os are
internally matched to 50 Ohms facilitating integra-
tion into Multi-Chip-Modules (MCMs). All data is
taken with the chip connected via two 0.025 mm
(1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +4.5 V, Idd = 150 mA [1]
Parameter
Min. Typ. Max. Min. Typ. Max.
Frequency Range
DC - 16
16 - 36
Gain
9.5 11.5
9.5 12
Gain Flatness
±0.5
±0.3
Gain Variation Over Temperature
0.012
0.018
Input Return Loss
18 16
Output Return Loss
28 22
Output Power for 1 dB Compression (P1dB)
20
22
19.5 21.5
Saturated Output Power (Psat)
24.5
23.5
Output Third Order Intercept (IP3)
35
32
Noise Figure
4 5.5
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
150
150
[1] Adjust Vgg1 between -2 to 0 V to achieve Idd = 150 mA typical.
Min.
9.5
16
Typ.
36 - 48
11.5
±1.1
0.041
15
18
19
21
29
8
150
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
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HMC1022 pdf
HMC1022
v00.0811
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 48 GHz
Reverse Isolation vs. Temperature
0
-10 +25C
+85C
-20 -55C
-30
-40
-50
-60
-70
-80
0
5 10 15 20 25 30 35 40 45 50
FREQUENCY (GHz)
Power Compression @ 24 GHz
32
28 Pout
Gain
24 PAE
20
16
12
8
4
0
-4 -1
2 5 8 11
INPUT POWER (dBm)
14
17
Gain & Power vs. Supply Current @ 24 GHz
30
25
20
Gain
15
P1dB
Psat
10
5
0
100 110 120 130 140 150
Idd (mA)
Gain & Power vs. Supply Voltage @ 24 GHz
30
25
20
Gain
P1dB
15 Psat
10
5
0
8 9 10 11
Vdd (V)
2
1.5
1
0.5
0
0
Power Dissipation
4 GHz
10 GHz
20 GHz
30 GHz
40 GHz
46 GHz
3 6 9 12
INPUT POWER (dBm)
15
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