|
|
Datasheet 2SA1015 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SA1015 | PNP Silicon Epitaxial Planar Transistor 2SA1015
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended.
Absolute Maximum Ratings (Ta = 25 OC) Param |  SEMTECH | transistor |
| 2 | 2SA1015 | PNP Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
2SA1015 TRANSISTOR (PNP)
FEATURES
SOT-23
z High voltage and high current z Excellent hFE Linearity z Low niose z Complementary to 2SC1815
1. BASE 2. EMITTER 3. COLLECTOR
MARKING: BA
MAXIMUM RATINGS (TA=25 |  Tuofeng Semiconductor | transistor |
| 3 | 2SA1015 | PNP Transistor SMD Type
TransistIoCrs
PNP Transistor 2SA1015
Features
High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.)
Low niose: NF=1dB(Typ.) at f=1KHz
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1+0.05
-0.01
+0.10.97 -0.1
1. |  Kexin | transistor |
| 4 | 2SA1015 | PNP EPITAXIAL PLANAR TRANSISTOR DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SA1015
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of AF amplifier general purpose amplification.
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Charact |  Dc Components | transistor |
| 5 | 2SA1015 | PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SA1015
PNP SILICON TRANSISTOR
LOW FREQUENCY PNP AMPLIFIER TRANSISTOR
FEATURES
* Collector-Emitter Voltage: BVCEO=-50V * Collector Current up to 150mA * High hFE Linearity * Complement to UTC 2SC1815
Lead-free: 2SA1015L Halogen-free: 2SA1015G
ORDERING INFOR |  Unisonic Technologies | transistor |
2SA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SA0683 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating  Panasonic Semiconductor transistor | | |
| 2 | 2SA0684 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
| 3 | 2SA0879 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base vo Panasonic Semiconductor transistor | | |
| 4 | 2SA0885 | Transistor, Silicon PNP Epitaxial Type Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SC1846 ■ Features
• Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t Panasonic Semiconductor transistor | | |
| 5 | 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0.3
Unit: mm
8.0+0.5 –0.1 3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter volt Panasonic Semiconductor transistor | | |
| 6 | 2SA100 | Ge PNP Drift ETC transistor | | |
| 7 | 2SA1001 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY  Inchange Semiconductor transistor | |
| Esta página es del resultado de búsqueda del 2SA1015. Si pulsa el resultado de búsqueda de 2SA1015 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |