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Datasheet 20N50E Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 20N50E | MTW20N50E MTW20N50E
Preferred Device
Power MOSFET 20 Amps, 500 Volts
N–Channel TO–247
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand hig | ON Semiconductor | data |
20N Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 20N03HL | MTD20N03HL MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD20N03HDL/D
Designer's
HDTMOS E-FET .™ High Density Power FET DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate
This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation m Motorola Semiconductors data | | |
2 | 20N03L | IPD20N03L IPD20N03L IPU20N03L OptiMOS® Buck converter series
Feature
•N-Channel
Product Summary VDS RDS(on) ID
P- TO251 -3-1
30 20 30
P- TO252 -3-11
V mΩ A
•Logic Level •Low On-Resistance RDS(on)
•Excellent Gate Charge x R DS(on) product (FOM)
•Superior thermal resistance Infineon Technologies data | | |
3 | 20N06 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
20N06
·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.085Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching applications in pow Inchange Semiconductor mosfet | | |
4 | 20N06 | NTD20N06
NTD20N06 Power MOSFET
20 Amps, 60 Volts, N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Features
• • • • • • • • • • • •
Pb−Free Packages are Ava ETC data | | |
5 | 20N10 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
20N10
·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.12Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
· Inchange Semiconductor mosfet | | |
6 | 20N15 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.13Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch regulators ·Switching converters, motor drivers, relay dr Inchange Semiconductor mosfet | | |
7 | 20N15 | 20A 150V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 20N15
20A, 150V N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The U TC 20N15 is an N-Ch annel POWER MOSFET, it u ses UTC’s advanc ed techn ology to provide c ustomers with high switching speed and low gate charge. The UT C 20N15 is su itable fo r bridge ci rcu UNISONIC TECHNOLOGIES mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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