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PDF 13NM65 Data sheet ( Hoja de datos )
| Número de pieza | 13NM65 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
13NM65
13A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 13NM65 is a high voltage super junction MOSFET and
is designed to have better characteristics.
The UTC 13NM65 Utilizing an advanced charge-balance
technology, enhance system efficiency, improve EMI and reliability.
such as low gate charge, low on-state resistance and have a high
power density and high rugged avalanche characteristics. This super
junction MOSFET usually used at AC/DC power conversion, and
industrial power applications.
FEATURES
* RDS(ON) < 0.5Ω @ VGS = 10V, ID = 6.5A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
13NM65L-TF3-T
13NM65G-TF3-T
13NM65L-TF1-T
13NM65G-TF1-T
13NM65L-TN3-R
13NM65G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
TO-220F1
TO-252
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tape Reel
13NM65L-TF3-T
(1) Packing Type
(2) Package Type
(3) Green Package
(1) T: Tube, R: Tape Reel
(2) TF3: TO-220F, TF1: TO-220F1, TN3: TO-252
(3) L: Lead Free, G: Halogen Free and Lead Free
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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13NM65
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 13NM65.PDF ] | |
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