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PDF TLP3063FS Data sheet ( Hoja de datos )
| Número de pieza | TLP3063FS | |
| Descripción | PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC | |
| Fabricantes | Toshiba Semiconductor | |
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TLP3061F(S),TLP3062F(S),TLP3063F(S)
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC
TLP3061F(S),TLP3062F(S),TLP3063F(S)
Office Machines
Home Appliances
Triac Drivers
Solid State Relays
Unit: mm
The TOSHIBA TLP3061F(S), TLP3062F(S) and TLP3063F(S) of a
gallium arsenide infrared emitting diode optically coupled to a
triac-output photocoupler featuring a zero-cross voltage and is housed in
a six-lead plastic DIP package. All parameters are tested to the
specification of the TLP3061(S) TLP3062(S) and TLP3063(S), including
test conditions and ratings.
• Peak Off-state voltage: 600 V (min)
• Trigger LED current: 15 mA (max) (TLP3061F(S))
10 mA (max) (TLP3062F(S))
5 mA (max) (TLP3063F(S))
• On-state current: 100 mA (max)
• Isolation voltage: 5000 Vrms (min)
• UL recognized: UL1577, File No. E67349
• SEMKO approved: EN60065
EN60950-1
EN60335-1, File No.712796
• BSI Approved: BS EN60065:2002, File No.8385
BS EN60950-1:2006, File No.8386
• Option (D4) type
VDE approved: DIN EN60747-5-2
Approved No. 40009302
Maximum operating insulation voltage: 1140 VPK
Maximum permissible overvoltage: 8000 VPK
Note: When ordering an EN60747-5-2 approved device,
"Option (D4)" should be designated.
• Construction mechanical rating
10.16 mm pitch
TLPxxxxF type
Creepage Distance
Clearance
Insulation Thickness
8.0 mm (min)
8.0 mm (min)
0.5 mm (min)
JEDEC
―
TOSHIBA
11-7A902
Weight: 0.39 g (typ.)
Pin Configuration
(top view)
1
2
3 ZC
6
4
1: Anode
2: Cathode
3: N.C.
4:Terminal 1
6:Terminal 2
ZC:Zero-cross Circuit
1 2008-11-19
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet TLP3063FS.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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