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PDF EMA302B Data sheet ( Hoja de datos )
| Número de pieza | EMA302B | |
| Descripción | 22-26 GHz Medium Power MMIC | |
| Fabricantes | Excelics | |
| Logotipo |  |
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Excelics
EMA302B
PRELIMINARY DATA SHEET
22-26 GHz Medium Power MMIC
• 22-26 GHz BANDWIDTH
• +28.0 dBm TYPICAL OUTPUT POWER
• 15 dB ± 1.5 dB TYPICAL POWER GAIN
• TWO STAGE, INPUT PARTIALLY MATCHED,
OUTPUT MATCH OFF CHIP
• 0.3 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
ELECTRICAL CHARACTERISTICS1 (Ta = 25 OC)
165
65
85
50
50 325
95 425
900
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
SYMBOL
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
F Operating Frequency Range
22 26 GHz
P1dB Ouput Power at 1dB Gain Compression
28 dBm
Gss Small Signal Gain
15 dB
PAE
Power added efficiency at 1dB gain Compression
24 %
VSWR in Input VSWR
2.5:1
VSWR out Output VSWR
Ids1/Ids2 Drain Supply Currents for 1st & 2nd Stages
3.0:1
120/240
mA
Vdd Power Supply Voltage
6 8V
Rth Thermal Resistance (Au-Sn Eutectic Attach)
18 oC/W
Note: 1. Specifications are based on device mounted in application circuit.
D.C. characteristics for 1st & 2nd FETs follow those of EPA080A and EPA160A, respectively.
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
ABSOLUTE2 CONTINUOUS3
Vds
Drain-Source Voltage
12V
8V
Vgs Gate-Source Voltage -8V
-3V
Ids1/Ids2 Drain Current
Idss
260 mA / 520 mA
Igsf1/Igsf2 Forward Gate Current
40 mA / 80 mA
7mA / 14 mA
Pin Input Power
25dBm
Tch Channel Temperature 175oC
Tstg Storage Temperature
-65/175oC
@3dB Compression
150oC
-65/150oC
Pt
Total Power Dissipation
7.5 W
6.3 W
Note: 2. Exceeding any of the above ratings may result in permanent damage.
3. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet EMA302B.PDF ] | |
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