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PDF P2503NPG Data sheet ( Hoja de datos )
| Número de pieza | P2503NPG | |
| Descripción | N- & P-Channel Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2503NPG
DIP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 30 25mΩ
P-Channel -30 45mΩ
ID
7A
-5A
D1 D1 D2 D2
#1S1 G1 S2 G2
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 70 °C
L = 0.1mH
TC = 25 °C
TC = 70 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
N-Channel P-Channel UNITS
30 -30 V
±20 ±20 V
7 -5
6 -4
A
20 -20
18 -18
19 mJ
2.5
W
1.6
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
TYPICAL
MAXIMUM
50
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
STATIC
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
LIMITS
UNIT
MIN TYP MAX
N-Ch 30
P-Ch -30
N-Ch 1 1.5 2.5
P-Ch -1 -1.5 -2.5
V
REV 1.2
1 Feb-09-2010
1 page  
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2503NPG
DIP-8
Halogen-Free & Lead-Free
100
Operation in This Area
is Lim ited by RDS(ON)
↓10
1
0.1 NOTE :
1.VGS= 10V
2.TA=25˚ C
3.RθJA =50˚ C/W
4.Single Pulse
0.01
0.1
1
100us
1m s
10m s
100m s
1S
10S
DC
10 100
500
400
300
200
100
0
0.0001
0.001
0.01
SINGLE PULSE
RθJA = 50˚ C/W
TA=25˚ C
0.1 1
10
REV 1.2
5 Feb-09-2010
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet P2503NPG.PDF ] | |
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