P1604ETF Datasheet PDF - NIKO-SEM
Part Number | P1604ETF | |
Description | P-Channel Field Effect Transistor | |
Manufacturers | NIKO-SEM | |
Logo | ||
There is a preview and P1604ETF download ( pdf file ) link at the bottom of this page. Total 4 Pages |
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P-Channel Logic Level Enhancement P1604ETF
Mode Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
16mΩ
ID
-40A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
-40
±20
-40
-25
-120
-40
78
42
17
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJc
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
3
60
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V, TJ = 125 °C
VDS = -5V, VGS = -10V
-40
-1.5 -2.2
-120
V
-3
±100 nA
1
µA
10
A
REV 1.2
May-04-2011
1
|
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P1604ETF electronic component. |
Information | Total 4 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ P1604ETF.PDF Datasheet ] |
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