P2203BEB Datasheet PDF - NIKO-SEM
Part Number | P2203BEB | |
Description | N-Channel Field Effect Transistor | |
Manufacturers | NIKO-SEM | |
Logo | ||
There is a preview and P2203BEB download ( pdf file ) link at the bottom of this page. Total 4 Pages |
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N-Channel Enhancement Mode
Field Effect Transistor
P2203BEB
PDFN 2x2S
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 22mΩ
ID3
21A
D
G
S
D DD
#1 S S G
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
TC = 25 °C
TC = 70 °C
TA = 25 °C
Pulsed Drain Current1
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
LIMITS
30
±20
21
17
8
6
60
18
16
16
10
2
1.2
-55 to 150
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
Junction-to-Ambient2
RθJA
65
Junction-to-Case
RθJC
7.6
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe.
3Package limitation current is 12A.
UNITS
V
V
A
mJ
W
°C
UNITS
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
LIMITS
UNIT
MIN TYP MAX
30
1 1.7
3
V
±100 nA
REV 0.9
Feb-21-2010
1
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P2203BEB electronic component. |
Information | Total 4 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ P2203BEB.PDF Datasheet ] |
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