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RJP020N06FRA Datasheet PDF - ROHM Semiconductor

Part Number RJP020N06FRA
Description Power MOSFET
Manufacturers ROHM Semiconductor 
Logo ROHM Semiconductor Logo 

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RJP020N06FRA
  Nch 60V 2A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
60V
240mΩ
±2A
2W
lFeatures
1) Low on-resistance
2) Low voltage drive(2.5V drive)
3) AEC-Q101 Qualified
lOutline
SOT-89
MPT3
 
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
1000
Taping code
T100
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
LS
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
60 V
Continuous drain current
ID ±2 A
Pulsed drain current
IDP*1 ±8 A
Gate - Source voltage
VGSS
±12 V
Power dissipation
PD*2 2 W
PD*3 500 mW
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160713 - Rev.001    

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RJP020N06FRA equivalent
RJP020N06FRA
      
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
        
Datasheet
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
     Junction Temperature
Fig.8 Typical Transfer Characteristics
                                                                                          
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/11
20160713 - Rev.001


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Featured Datasheets

Part NumberDescriptionManufacturers
RJP020N06FRAThe function is Power MOSFET.ROHM Semiconductor
ROHM Semiconductor

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