(PDF) PT530BA Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PT530BA
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PT530BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4.3mΩ @VGS = 10V ID2 89A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 89 56 150 Avalanche Current IAS 48.5 Avalanche Energy L = 0.1 mH EAS 117 Power Dissipation TC= 25 °C TC= 100°C PD 62.5 25 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is 60A. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2 60 UNITS °C / W REV 1.0 1 2014/11/13 1 page PT530BA N-Channel Enhancement Mode MOSFET REV 1.0 5 2014/11/13 5 Page

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PDF PT530BA Data sheet ( Hoja de datos )