P2904BD
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 29mΩ @VGS = 10V
ID
25A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA= 25 °C
TA= 70 °C
ID
IDM
25
20
75
Avalanche Current
IAS 27
Avalanche Energy2
L=0.1mH
EAS
37
Power Dissipation
TC= 25 °C
TC= 70°C
PD
30
20
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNIT
4.1 S
°C / W
40
REV 1.0
1 2014/5/12
No Preview Available !

1 page



P2904BD
N-Channel Logic Level Enhancement Mode MOSFET
*因为各家封装模具不同而外观略有所差异，不影响电性及Layout。
REV 1.0
5
2014/5/12

5 Page