P0903BDL Datasheet PDF - UNIKC
Part Number | P0903BDL | |
Description | N-Channel Enhancement Mode MOSFET | |
Manufacturers | UNIKC | |
Logo | ||
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N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 9.5mΩ @VGS = 10V
ID
56A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
56
35
160
Avalanche Current
IAS 34
Avalanche Energy
L = 0.1mH
EAS
60
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
49
20
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.55
63
UNITS
°C / W
Ver 1.1
1 2013-3-15
|
|
P0903BDL
N-Channel Enhancement Mode MOSFET
Ver 1.1
5 2013-3-15
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P0903BDL electronic component. |
Information | Total 5 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Product Image and Detail view | 1. N-ch, MOSFET ( PDF ) [ Learn More ] | |
Download | [ P0903BDL.PDF Datasheet ] |
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