P2803HVG Datasheet PDF - UNIKC
Part Number | P2803HVG | |
Description | N-Channel Enhancement Mode MOSFET | |
Manufacturers | UNIKC | |
Logo | ||
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N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 27.5mΩ @VGS = 10V
ID
6.5A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1,2
TA = 25 °C
TA = 70 °C
ID
IDM
6.5
5
30
Avalanche Current
IAS 20
Avalanche Energy
L = 0.1mH
EAS
20
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM UNITS
Junction-to-Ambient3
RqJA
63 °C / W
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA = 25° C. The value in any given application depends on the user's specific board design.
Ver 1.0
1 2012/4/13
|
|
P2803HVG
N-Channel Enhancement Mode MOSFET
Ver 1.0
5 2012/4/13
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P2803HVG electronic component. |
Information | Total 5 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ P2803HVG.PDF Datasheet ] |
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Featured Datasheets
Part Number | Description | MFRS |
P2803HVG | The function is N-Channel Enhancement Mode MOSFET. UNIKC | |
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