(PDF) P2803NVG Datasheet - N & P-Channel Enhancement Mode MOSFET

Número de pieza	P2803NVG
Descripción	N & P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P2803NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 27.5mΩ @VGS = 10V -30V 34mΩ @VGS = -10V ID Channel 7A N -6A P SOP- 08 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TC = 25 °C TC = 70 °C N7 P -6 ID N 6 P -5 Pulsed Drain Current1 N 20 IDM P -20 Power Dissipation TC = 25 °C TC = 70 °C N2 P2 PD N 1.3 P 1.3 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle ≦ 1% SYMBOL RqJA TYPICAL MAXIMUM UNITS 62.5 °C / W Rev 1.1 1 2015/5/22 1 page P2803NVG N&P-Channel Enhancement Mode MOSFET Rev 1.1 5 2015/5/22 5 Page

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PDF P2803NVG Data sheet ( Hoja de datos )