DataSheet.es    


Datasheet P0610BT Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1P0610BTN-Channel Field Effect Transistor

NIKO-SEM N-Channel Enhancement Mode P0610BT Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 6.5mΩ ID2 120A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-
NIKO-SEM
NIKO-SEM
transistor
2P0610BTN-Channel Enhancement Mode MOSFET

P0610BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 6.5mΩ @VGS = 10V ID2 120A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuou
UNIKC
UNIKC
mosfet
3P0610BTFN-Channel Field Effect Transistor

NIKO-SEM N-Channel Enhancement Mode P0610BTF Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 6.5mΩ ID 66A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-
NIKO-SEM
NIKO-SEM
transistor
4P0610BTFN-Channel Enhancement Mode MOSFET

P0610BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 6.5mΩ @VGS = 10V ID 66A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuou
UNIKC
UNIKC
mosfet


P06 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1P0602Asolid state crowbar devices

Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected] An Invensys company Teccor Electronics is the proprietor of the SIDACtor®, B
Teccor Electronics
Teccor Electronics
data
2P0602AAsolid state crowbar devices

Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected] An Invensys company Teccor Electronics is the proprietor of the SIDACtor®, B
Teccor Electronics
Teccor Electronics
data
3P0602ACMCsolid state crowbar devices

Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected] An Invensys company Teccor Electronics is the proprietor of the SIDACtor®, B
Teccor Electronics
Teccor Electronics
data
4P0602Zsolid state crowbar devices

Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected] An Invensys company Teccor Electronics is the proprietor of the SIDACtor®, B
Teccor Electronics
Teccor Electronics
data
5P0603BDN-Channel Enhancement Mode MOSFET

P0603BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5.8mΩ @VGS = 10V ID 70A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Dra
UNIKC
UNIKC
mosfet
6P0603BDBN-Channel Enhancement Mode MOSFET

P0603BDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5.8mΩ @VGS = 10V ID 72A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Curr
UNIKC
UNIKC
mosfet
7P0603BDDN-Channel Enhancement Mode MOSFET

P0603BDD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5.8mΩ @VGS = 10V ID 71A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Curr
UNIKC
UNIKC
mosfet



Esta página es del resultado de búsqueda del P0610BT. Si pulsa el resultado de búsqueda de P0610BT se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap