P1610AT Datasheet PDF - NIKO-SEM
Part Number | P1610AT | |
Description | N-Channel Field Effect Transistor | |
Manufacturers | NIKO-SEM | |
Logo | ||
There is a preview and P1610AT download ( pdf file ) link at the bottom of this page. Total 4 Pages |
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N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P1610AT
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
110V
16mΩ
ID
51A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1.GATE
2.DRAIN
3.SOURCE
LIMITS
±20
51
32
150
12
72
96
38
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
TYPICAL
MAXIMUM
1.3
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 88V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
LIMITS
UNIT
MIN TYP MAX
110
2 3.2
4
V
±100 nA
1
A
10
REV 1.0
E-28-2
1
|
|
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P1610AT electronic component. |
Information | Total 4 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ P1610AT.PDF Datasheet ] |
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