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Datasheet SNN0630Q Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SNN0630Q | Advanced N-Ch Trench MOSFET SNN0630Q
Advanced N-Ch Trench MOSFET
Portable Equipment Application
Features
Low On-state resistance: 28m at VGS = 10V, ID = 2.9A Low gate charge: Qg= 4.5nC (Typ.) High performance trench technology for extremely low RDS(on) 100% avalanche tested
Halogen free and RoHS compli |  KODENSHI KOREA | mosfet |
SNN Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SNN01Z10Q | Logic level N-CH Power MOWFET SNN01Z10Q
Logic Level N-Ch Power MOSFET
Logic Level Gate Drive Application
Features
• Logic level gate drive
• Max. RDS(ON) = 0.24Ω at VGS = 10V, ID = 0.5A • Low RDS(on) provides higher efficiency • ESD protected: 2000V (HBM: ±1000V)
• Halogen free and RoHS compliant device
Ordering I  KODENSHI data | | |
| 2 | SNN01Z60Q | Logic Level gat Drive Application SN NN01Z Z60Q Q
Logic Le evel N-Ch Po ower MOSFE ET
L Logic Le evel Ga ate Drive App plicatio on
Fe eatures
• Logic level l gate drive e • Max. RDS(ON a VGS = 10V V, ID = 0.5A N) = 135mΩ at • Low RDS(on) provides hi igher efficie ency • ESD protec cted: 1000V V (HBM ±500 0V) • Halogen f KODENSHI KOREA data | | |
| 3 | SNN0310Q | Advanced N-Ch Trench MOSFET SNN0310Q
Advanced N-Ch Trench MOSFET
100V, 3A N-Channel Power Trench MOSFET
Features
Max. RDS(ON) = 150m at VGS = 10V, ID = 2A Low gate charge: Qg=18nC (Typ.) High performance trench technology for extremely low RDS(on) 100% avalanche tested
Halogen free and RoHS compliant d KODENSHI KOREA mosfet | | |
| 4 | SNN0630Q | Advanced N-Ch Trench MOSFET SNN0630Q
Advanced N-Ch Trench MOSFET
Portable Equipment Application
Features
Low On-state resistance: 28m at VGS = 10V, ID = 2.9A Low gate charge: Qg= 4.5nC (Typ.) High performance trench technology for extremely low RDS(on) 100% avalanche tested
Halogen free and RoHS compli KODENSHI KOREA mosfet | | |
| 5 | SNN4010D | N-Ch Trench MOSFET SNN4010D
N-Ch Trench MOSFET
Power Switching Application
Features
Drain-source breakdown voltage: BVDSS=100V Low gate charge device
Low drain-source On resistance: RDS(on)=25mΩ (Typ.) Advanced trench process technology
High avalanche energy, 100% test
Ordering Information
Pa KODENSHI KOREA mosfet | | |
| 6 | SNN5010D | Advanced N-Ch Power MOSFET SNN5010D
Advanced N-Ch Power MOSFET
DC/DC CONVERTER APPLICATIONS
Features
• High Voltage : BVDSS=100V(Min.) • Low Crss : Crss=130pF(Typ.) • Low gate charge : Qg=75nC(Typ.) • Low RDS(ON) : RDS(ON)=26mΩ(Max.)
Ordering Information
Type No. SNN5010D
Marking SNN5010
Package Code TO-252
PIN KODENSHI KOREA mosfet | |
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