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What is FGA40T65SHD?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "IGBT ( Insulated Gate Bipolar Transistor )".


FGA40T65SHD Datasheet PDF - Fairchild Semiconductor

Part Number FGA40T65SHD
Description IGBT ( Insulated Gate Bipolar Transistor )
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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FGA40T65SHD
650 V, 40 A Field Stop Trench IGBT
December 2014
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 40 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
C
G
C
E
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM (2)
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC =120 A, RG = 30  Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
©2014 Fairchild Semiconductor Corporation
FGA40T65SHD Rev. C2
1
G
E
FGA40T65SHD
650
20
30
80
40
120
120
40
20
120
268
134
-55 to +175
-55 to +175
300
Unit
V
A
A
A
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com

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FGA40T65SHD equivalent
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs.
Gate Resistance
Figure 10. Turn-off Characteristics vs.
Gate Resistance
Figure 11. Switching Loss vs.
Gate Resistance
Figure 12. Turn-on Characteristics vs.
Collector Current
©2014 Fairchild Semiconductor Corporation
FGA40T65SHD Rev. C2
5
www.fairchildsemi.com


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Featured Datasheets

Part NumberDescriptionMFRS
FGA40T65SHDThe function is IGBT ( Insulated Gate Bipolar Transistor ). Fairchild SemiconductorFairchild Semiconductor
FGA40T65SHDFThe function is IGBT ( Insulated Gate Bipolar Transistor ). Fairchild SemiconductorFairchild Semiconductor

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