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PDF SUM201MN Data sheet ( Hoja de datos )
| Número de pieza | SUM201MN | |
| Descripción | P-Channel MOSFET + PNP BJT | |
| Fabricantes | AUK | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SUM201MN (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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SUM201MN
P-Channel MOSFET + PNP BJT
Integrated Power MOSFET
with PNP Low VCE(sat) Switching Transistor
DFN-8
This integrated device represents a new level of safety and
board−space reduction by combining the 20V P−Channel FET with a
PNP Silicon Low VCE(sat) switching transistor. This newly integrated
product provides higher efficiency and accuracy for battery powered
portable electronics.
Features
• Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive (MOSFET)
• Performance DFN Package
BVDSS
-20V
BVCEO
MOSFET
RDS(ON) Typ.
48mΩ
@ VGS=-4.5V
65mΩ
@ VGS=-2.5V
PNP BJT
BVEBO.
• This is a Halogen−Free Device
-20V
-5V
ID Max
-5.3A
IC Max
-5A
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
Ordering Information
Device
Marking Package
SUM201MN SUM201
DFN8
Marking Diagram
1
SUM201
YWW
Column 1 : Device Code
Column 2 : Date Code (year, week)
Simple Schematic
Drain 8
Drain 7
Drain
1 Source
2 Gate
Collector
Collector
KSD-T6T002-001
6 3 Emitter
Collector
5 4 Base
Bottom View
1
1 page  
Typical Characteristic Curves (P-Channel MOSFET)
Fig. 1 ID - VDS
Fig. 2 ID - VGS
℃
SUM201MN
-
Fig. 3 RDS(on) - ID
a℃
-m
Fig. 4 IS - VSD
-
-
Fig. 5 Capacitance - VDS
Fig. 6 VGS - QG
-
℃
KSD-T6T002-001
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SUM201MN.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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