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PDF SMK0260I Data sheet ( Hoja de datos )
| Número de pieza | SMK0260I | |
| Descripción | Advanced N-Ch Power MOSFET | |
| Fabricantes | AUK | |
| Logotipo |  |
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SMK0260I
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
• High Voltage : BVDSS=600V(Min.)
• Low Crss : Crss=3.4pF(Typ.)
• Low gate charge : Qg=7.0nC(Typ.)
• Low RDS(on) : RDS(on)=4.7Ω(Max.)
Ordering Information
Type No.
Marking
Package Code
SMK0260I
SMK0260
I-PAK
PIN Connection
GDS
G
I-PAK
D
S
Marking Diagram
SMK
0260
YWW
Column 1,2 : Device Code
Column 3 : Production Information
e.g.) YWW
-. YWW : Date Code (year, week)
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
VDSS
Gate-source voltage
Drain current (DC) *
VGSS
(Tc=25℃)
ID (Tc=100℃)
Drain current (Pulsed) *
IDM
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
②
②
①
①
PD
IAS
EAS
IAR
EAR
Junction temperature
TJ
Storage temperature range
Tstg
* Limited by maximum junction temperature
Rating
600
±30
2.0
1.35
8.0
48
2.0
130
2.0
5.6
150
-55~150
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-A)
Typ.
-
-
Max.
2.6
62.5
KSD-T6Q004-001
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
Unit
°C/W
1
1 page  
Fig. 11 Gate Charge Test Circuit & Waveform
SMK0260I
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T6Q004-001
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SMK0260I.PDF ] | |
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