PDF FCPF190N60E Data sheet ( Hoja de datos )

Número de pieza	FCPF190N60E
Descripción	MOSFET ( Transistor )
Fabricantes	Fairchild Semiconductor
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No Preview Available ! FCP190N60E / FCPF190N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 20.6 A, 190 mΩ December 2014 Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 160 mΩ • Ultra Low Gate Charge (Typ. Qg = 63 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 178 pF) • 100% Avalanche Tested • An Integrated Gate Resistor • RoHS Compliant Applications • LCD / LED / PDP TV Lighting • Solar Inverter • AC-DC Power Supply Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching perfor- mance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementa- tion. For faster switching in applications where switching losses must be at an absolute minimum, please consider the Super- FET II MOSFET series. D GDS TO-220 GDS TO-220F G MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - DC - AC - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (f > 1 Hz) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Drain current limited by maximum junction temperature. Thermal Characteristics S FCP190N60E FCPF190N60E 600 ±20 ±30 20.6 20.6 13.1 13.1* 61.8 61.8* 400 4.0 2.1 100 20 208 39 1.67 0.31 -55 to +150 300 Unit V V V A A mJ A mJ V/ns W W/oC oC oC Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FCP190N60E 0.6 62.5 FCPF190N60E 3.2 62.5 Unit oC/W ©2011 Fairchild Semiconductor Corporation FCP190N60E / FCPF190N60E Rev. C11 1 www.fairchildsemi.com 1 page Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve for FCP190N60E 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 10-5 10-4 PDM t1 t2 Notes: 1. ZθJC(t) = 0.6oC/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM ZθJC(t) 10-3 10-2 Rt1e, cRteacntganuglaurlaPruPlusleseDDuuraratitoionn[[sseecc]] 10-1 1 Figure 14. Transient Thermal Response Curve for FCPF190N60E 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0.01 10-5 10-4 PDM t1 t2 Notes: 1. ZθJC(t) = 3.2oC/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM ZθJC(t) 10-3 10-2 10-1 1 tR1,eRcteacntagnuglualraPr PuulslseeDDuurraattiioonn [[sseecc]] 10 100 ©2011 Fairchild Semiconductor Corporation FCP190N60E / FCPF190N60E Rev. C11 5 www.fairchildsemi.com 5 Page

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