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PDF FDB28N30 Data sheet ( Hoja de datos )
| Número de pieza | FDB28N30 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDB28N30
N-Channel MOSFET
300V, 28A, 0.129Ω
Features
• RDS(on) = 0.108Ω ( Typ.)@ VGS = 10V, ID = 14A
• Low gate charge ( Typ. 39nC)
• Low Crss ( Typ. 35pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
June 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
D
GS
D2-PAK
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
RθJA*
Thermal Resistance, Junction to Ambient*
RθJA
Thermal Resistance, Junction to Ambient
*When mounted on the minimum pad size recommended (PCB Mount)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
©2007 Fairchild Semiconductor Corporation
FDB28N30 Rev. A
1
S
Ratings
300
±30
28
19
112
588
28
25
4.5
250
2.0
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Ratings
0.5
40
62.5
Units
oC/W
www.fairchildsemi.com
1 page  
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDB28N30 Rev. A
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDB28N30.PDF ] | |
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