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PDF FDB13AN06A0 Data sheet ( Hoja de datos )
| Número de pieza | FDB13AN06A0 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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January 2014
FDB13AN06A0
N-Channel PowerTrench® MOSFET
60 V, 62 A, 13.5 mΩ
Features
Applications
• rDS(on) = 11.5 mΩ ( Typ.) @ VGS = 10 V, ID = 62 A
• Motor Load Control
• Qg(tot) = 22 nC ( Typ.) @ VGS = 10 V
• DC-DC converters and Off-line UPS
• Low Miller Charge
• Distributed Power Architectures and VRMs
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82555
D
D
G
S
D2-PAK
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (TA = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient (Note 2)
Thermal Resistance Junction to Ambient, 1in2 copper pad area
Ratings
60
±20
62
44
10.9
Figure 4
56
115
0.77
-55 to 175
1.3
62
43
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
©2012 Fairchild Semiconductor Corporation
FDB13AN06A0 Rev. C2
1
www.fairchildsemi.com
1 page  
Typical Characteristics TC = 25°C unless otherwise noted
1.4 1.2
VGS = VDS, ID = 250µA
ID = 250µA
1.2
1.1
1.0
0.8
1.0
0.6
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
3000
1000
COSS ≅ CDS + CGD
CISS = CGS + CGD
10
VDD = 30V
8
6
CRSS = CGD
100
40
0.1
VGS = 0V, f = 1MHz
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 13. Capacitance vs Drain to Source
Voltage
4
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 62A
ID = 31A
0
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2012 Fairchild Semiconductor Corporation
FDB13AN06A0 Rev. C2
5
www.fairchildsemi.com
5 Page 
Mechanical Dimensions
Figure 22. TO263 (D2PAK), Molded, 2-Lead, Surface Mount
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002
©2012 Fairchild Semiconductor Corporation
FDB13AN06A0 Rev. C2
11
www.fairchildsemi.com
11 Page | ||
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