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What is FDB070AN06A0?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "MOSFET ( Transistor )".


FDB070AN06A0 Datasheet PDF - Fairchild Semiconductor

Part Number FDB070AN06A0
Description MOSFET ( Transistor )
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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October 2013
FDB070AN06A0
N-Channel PowerTrench® MOSFET
60 V, 80 A, 7 mΩ
Features
Applications
RDS(on) = 6.1 m( Typ.) @ VGS = 10 V, ID = 80 A
Synchronous Rectification for ATX / Server / Telecom PSU
Qg(tot) = 51 nC ( Typ.) @ VGS = 10 V
Battery Protection Circuit
Low Miller Charge
Motor Drives and Uninterruptible Power Supplies
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82567
D
D
G
S
D2-PAK
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 97oC, VGS = 10V)
Continuous (TA = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case, Max.
Thermal Resistance Junction to Ambient, Max. (Note 2)
Thermal Resistance Junction to Ambient, Max., 1in2 copper pad area
FDB070AN06A0
60
±20
80
15
Figure 4
190
175
1.17
-55 to 175
0.86
62
43
Unit
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
©2003 Fairchild Semiconductor Corporation
FDB070AN06A0 Rev. C2
1
www.fairchildsemi.com

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FDB070AN06A0 equivalent
Typical Characteristics TC = 25°C unless otherwise noted
1.2 1.10
VGS = VDS, ID = 250µA
ID = 250µA
1.0 1.05
0.8 1.00
0.6 0.95
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.90
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
CISS = CGS + CGD
10
VDD = 30V
8
1000
CRSS = CGD
COSS CDS + CGD
VGS = 0V, f = 1MHz
100
0.1 1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 13. Capacitance vs Drain to Source
Voltage
6
4
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 80A
ID = 15A
10 20 30 40 50 60
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2003 Fairchild Semiconductor Corporation
FDB070AN06A0 Rev. C2
5
www.fairchildsemi.com


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Featured Datasheets

Part NumberDescriptionMFRS
FDB070AN06A0The function is MOSFET ( Transistor ). Fairchild SemiconductorFairchild Semiconductor

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