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PDF SMN04L20D Data sheet ( Hoja de datos )
| Número de pieza | SMN04L20D | |
| Descripción | Logic Level N-Ch Power MOSFET | |
| Fabricantes | AUK | |
| Logotipo |  |
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SMN04L20D
Logic Level N-Ch Power MOSFET
200V LOGIC N-Channel MOSFET
Features
Drain-Source breakdown voltage: BVDSS=200V (Min.)
Low gate charge: Qg=4nC (Typ.)
Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)
100% avalanche tested
RoHS compliant device
Ordering Information
Part Number
Marking
Package
SMN04L20D
SMN04L20
TO-252
D
G
S
TO-252
Marking Information
SMN
04L20
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Avalanche current (Note 2)
Single pulsed avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
VDSS
VGSS
ID
Tc=25C
Tc=100C
IDM
IAS
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rev. date: 01-OCT-13
KSD-T6O036-001
Rating
200
20
3.2
2.02
12.8
2.5
52
2.5
3.3
33
150
-55~150
Unit
V
V
A
A
A
A
mJ
A
mJ
W
C
C
www.auk.co.kr
1 of 8
1 page  
Fig. 12 Gate Charge Test Circuit & Waveform
SMN04L20D
Fig. 13 Resistive Switching Test Circuit & Waveform
Fig. 14 EAS Test Circuit & Waveform
Rev. date: 01-OCT-13
KSD-T6O036-001
www.auk.co.kr
5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SMN04L20D.PDF ] | |
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