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PDF SMN0470F Data sheet ( Hoja de datos )
| Número de pieza | SMN0470F | |
| Descripción | Advanced N-Ch Power MOSFET | |
| Fabricantes | AUK | |
| Logotipo |  |
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SMN0470F
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
Drain-Source breakdown voltage: BVDSS=700V (Min.)
Low gate charge: Qg=13nC (Typ.)
Low drain-source On resistance: RDS(on)=2.36Ω (Max.)
100% avalanche tested
RoHS compliant device
Ordering Information
Part Number
Marking
Package
SMN0470F
SMN0470
TO-220F-3L
GDS
TO-220F-3L
Marking Information
AUAKUK
GFYMDD
SMNΔ0Y4M7D0 D
SDB20D45
Column 1: Manufacturer
Column 2: Production Information
e.g.) GFYMDD
-. G: Option Code (H: Halogen Free)
-. F: Factory Management Code
-. YMDD: Date Code (Year, Month, Date)
Column 3: Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single avalanche current (Note 2)
Single pulsed avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
VDSS
VGSS
ID
Tc=25C
Tc=100C
IDM
IAS
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rev. date: 23-AUG-11
KSD-T0O103-000
Rating
700
30
4
2.53
16
4
344
4
2.9
29
150
-55~150
Unit
V
V
A
A
A
A
mJ
A
mJ
W
C
C
www.auk.co.kr
1 of 8
1 page  
Fig. 12 Gate Charge Test Circuit & Waveform
SMN0470F
Fig. 13 Resistive Switching Test Circuit & Waveform
Fig. 14 EAS Test Circuit & Waveform
Rev. date: 23-AUG-11
KSD-T0O103-000
www.auk.co.kr
5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SMN0470F.PDF ] | |
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