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Datasheet SMN03T80IS-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


SMN Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1SMN01L20QLogic Level N-Ch Power MOSFET

SMN01L20Q Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features  0.85A, 200V, RDS(on)=1.35Ω @ VGS=10V  Low gate charge: Qg=4nC (Typ.)  Fast switching  100% avalanche tested  RoHS compliant device Ordering Information Part Number Marking SMN01L20Q SMN01L20 Packag
AUK
AUK		mosfet
2SMN01Z30QAdvanced N-Ch Power MOSFET

SMN01Z30Q Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features  High Voltage : BVDSS=300V(Min.)  Low Crss : Crss=3.2pF(Typ.)  Low gate charge : Qg=2.9nC(Typ.)  Low RDS(on) : RDS(on)=8Ω(Max.) Ordering Information Type No. Marking Package Code SMN01Z30Q SMN01Z30 S
AUK
AUK		mosfet
3SMN0250FAdvanced N-Ch Power MOSFET

SMN0250F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-Source breakdown voltage: BVDSS=500V (Min.)  Low gate charge: Qg=7nC (Typ.)  Low drain-source On resistance: RDS(on)=3.4Ω (Max.)  100% avalanche tested  RoHS compliant device Ordering Information
AUK
AUK		mosfet
4SMN03T80FAdvanced N-Ch Power MOSFET

SMN03T80F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  BVDSS=800V (Min.)  Low gate charge: Qg=19nC (Typ.)  Low drain-source On resistance: RDS(on)=4.2Ω (Max.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package
AUK
AUK		mosfet
5SMN03T80ISAdvanced N-Ch Power MOSFET

SMN03T80IS Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  BVDSS=800V Min.  Low gate charge: Qg=19nC (Typ.)  Low drain-source On resistance: RDS(on)=4.2Ω (Max.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package
AUK
AUK		mosfet
6SMN0470FAdvanced N-Ch Power MOSFET

SMN0470F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-Source breakdown voltage: BVDSS=700V (Min.)  Low gate charge: Qg=13nC (Typ.)  Low drain-source On resistance: RDS(on)=2.36Ω (Max.)  100% avalanche tested  RoHS compliant device Ordering Informatio
AUK
AUK		mosfet
7SMN04L20DLogic Level N-Ch Power MOSFET

SMN04L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features  Drain-Source breakdown voltage: BVDSS=200V (Min.)  Low gate charge: Qg=4nC (Typ.)  Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)  100% avalanche tested  RoHS compliant device Ordering Information
AUK
AUK		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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