FCD1300N80Z Datasheet PDF - Fairchild Semiconductor
Part Number | FCD1300N80Z | |
Description | MOSFET ( Transistor ) | |
Manufacturers | Fairchild Semiconductor | |
Logo | ||
There is a preview and FCD1300N80Z download ( pdf file ) link at the bottom of this page. Total 9 Pages |
Preview 1 page No Preview Available ! FCD1300N80Z
N-Channel SuperFET® II MOSFET
800 V, 4 A, 1.3
August 2014
Features
• RDS(on) = 1.05 Typ.)
• Ultra Low Gate Charge (Typ. Qg = 16.2 nC)
• Low Eoss (Typ. 1.57 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 48.7 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
• AC - DC Power Supply
• LED Lighting
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. In
addition, internal gate-source ESD diode allows to withstand
over 2kV HBM surge stress.Consequently, SuperFET II
MOSFET is very suitable for the switching power applications
such as Audio, Laptop adapter, Lighting, ATX power and
industrial power applications.
D
G
S
D
D-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
Parameter
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
- DC
- AC
(f > 1 Hz)
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCD1300N80Z Rev. C0
1
FCD1300N80Z
800
±20
±30
4
2.5
12
48
0.8
0.26
100
20
52
0.42
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCD1300N80Z
2.4
100
Unit
oC/W
www.fairchildsemi.com
|
|
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
4
1 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single pulse
0.01
0.005
10-5
10-4
PDM
*Notes:
t1
t2
1. ZJC(t) = 2.4 oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
100
101
©2014 Fairchild Semiconductor Corporation
FCD1300N80Z Rev. C0
5
www.fairchildsemi.com
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FCD1300N80Z electronic component. |
Information | Total 9 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ FCD1300N80Z.PDF Datasheet ] |
Share Link :
Electronic Components Distributor
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
Part Number | Description | MFRS |
FCD1300N80Z | The function is MOSFET ( Transistor ). Fairchild Semiconductor | |
Semiconductors commonly used in industry:
1N4148 |  
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
FCD1
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA |