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What is FCD1300N80Z?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "MOSFET ( Transistor )".


FCD1300N80Z Datasheet PDF - Fairchild Semiconductor

Part Number FCD1300N80Z
Description MOSFET ( Transistor )
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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FCD1300N80Z
N-Channel SuperFET® II MOSFET
800 V, 4 A, 1.3
August 2014
Features
• RDS(on) = 1.05 Typ.)
• Ultra Low Gate Charge (Typ. Qg = 16.2 nC)
• Low Eoss (Typ. 1.57 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 48.7 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
• AC - DC Power Supply
• LED Lighting
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. In
addition, internal gate-source ESD diode allows to withstand
over 2kV HBM surge stress.Consequently, SuperFET II
MOSFET is very suitable for the switching power applications
such as Audio, Laptop adapter, Lighting, ATX power and
industrial power applications.
D
G
S
D
D-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
Parameter
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
- DC
- AC
(f > 1 Hz)
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCD1300N80Z Rev. C0
1
FCD1300N80Z
800
±20
±30
4
2.5
12
48
0.8
0.26
100
20
52
0.42
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCD1300N80Z
2.4
100
Unit
oC/W
www.fairchildsemi.com

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FCD1300N80Z equivalent
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
4
1 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single pulse
0.01
0.005
10-5
10-4
PDM
*Notes:
t1
t2
1. ZJC(t) = 2.4 oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
100
101
©2014 Fairchild Semiconductor Corporation
FCD1300N80Z Rev. C0
5
www.fairchildsemi.com


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Part NumberDescriptionMFRS
FCD1300N80ZThe function is MOSFET ( Transistor ). Fairchild SemiconductorFairchild Semiconductor

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