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FCD850N80Z Datasheet PDF


FCD850N80Z - Fairchild Semiconductor

Part Number FCD850N80Z
Description MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 
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FCD850N80Z datasheet
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FCD850N80Z pdf, equivalent, schematic
Package Marking and Ordering Information
Part Number
FCD850N80Z
FCU850N80Z
Top Mark
FCD850N80Z
FCU850N80Z
Package
DPAK
IPAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
NA
Tape Width
16 mm
NA
Quantity
2500 units
75 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VGS = 0 V, ID = 1 mA, TJ = 25C
ID = 1 mA, Referenced to 25oC
VDS = 800 V, VGS = 0 V
VDS = 640 V, VGS = 0 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 0.6 mA
VGS = 10 V, ID = 3 A
VDS = 20 V, ID = 3 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 640 V, ID = 6 A,
VGS = 10 V
(Note 4)
f = 1 MHz
Min.
800
-
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 400 V, ID = 6 A,
VGS = 10 V, Rg = 4.7
Drain-Source Diode Characteristics
IS
ISM
VSD
trr
Qrr
Notes:
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 6 A
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0 V, ISD = 6 A,
dIF/dt = 100 A/s
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 1.2 A, VDD 50 V, RG = 25 , Starting TJ = 25C
3. ISD 6 A, di/dt 200 A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially independent of operating temperature typical characteristics.
(Note 4)
-
-
-
-
-
-
-
-
-
Typ.
-
0.8
-
-
-
-
710
3.5
990
28
0.74
15
106
22
5
8.6
2.4
16
10
40
4.5
-
-
-
318
4.5
Max. Unit
-V
- V/oC
25
250
A
±10 A
4.5 V
850 m
-S
1315
37
-
-
-
29
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
42 ns
30 ns
90 ns
19 ns
6A
18 A
1.2 V
- ns
- C
©2014 Fairchild Semiconductor Corporation
FCD850N80Z / FCU850N80Z Rev. C0
2
www.fairchildsemi.com
---------------------------------------------
FCD850N80Z transistor, diode fet, igbt, scr





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Part NumberDescriptionManufacturers
FCD850N80ZThe function of this parts is a MOSFET.Fairchild Semiconductor
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