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6R385P PDF Datasheet - IPI60R385CP - Infineon

Part Number 6R385P
Description IPI60R385CP
Manufacturers Infineon 
Logo Infineon Logo 
Preview
Preview ( 10 pages )
		
6R385P datasheet, circuit
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPI60R385CP
650 V
0.385
17 nC
PG-TO262
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type
IPI60R385CP
Package
PG-TO262
Ordering Code Marking
SP000103250 6R385P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=3.4 A, V DD=50 V
I D=3.4 A, V DD=50 V
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Rev. 2.1
page 1
Value
9.0
5.7
27
227
0.3
3
50
±20
±30
83
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2007-02-15

1 page

6R385P pdf, schematic
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPI60R385CP
Value
5.2
27
15
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
min.
Values
typ.
Unit
max.
- - 1.5 K/W
- - 62
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
600
V GS(th) V DS=V GS, I D=0.34 mA 2.5
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=5.2 A,
T j=25 °C
V GS=10 V, I D=5.2 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
-
- -V
3 3.5
- 1 µA
10 -
- 100 nA
0.35 0.385
0.94
1.8
-
-
Rev. 2.1
page 2
2007-02-15

2 Page

6R385P equivalent
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
16
14
20 V
12
10
10 V
8V
7V
6V
5.5 V
IPI60R385CP
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
1.6
6 V 6.5 V
5 V 5.5 V
7V
1.2 20 V
8 5 V 0.8
6
4.5 V
4 0.4
2
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=5.2 A; V GS=10 V
1.2
1
0.8
0.6
98 %
0.4 typ
0.2
0
-60 -20 20
60 100 140
T j [°C]
0
20 0 5 10
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
40
36
32
28
24
20
16
12
8
4
0
180 0 2 4 6
V GS [V]
15 20
C °25
C °150
8 10
Rev. 2.1
page 5
2007-02-15

5 Page

6R385P diode, scr
PG-TO262-3-1 : Outlines
IPI60R385CP
Dimensions in mm/inches:
Rev. 2.1
page 9
2007-02-15

9 Page





Information Total 10 Pages
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