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PDF D882M Data sheet ( Hoja de datos )
| Número de pieza | D882M | |
| Descripción | NPN Transistor | |
| Fabricantes | JCET | |
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Hay una vista previa y un enlace de descarga de D882M (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
D882M TRANSISTOR (NPN)
TO-252-2L
FEATURES
Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
30
5
3
1.25
150
-55-150
Unit
V
V
V
A
W
℃
℃
1. BASE
2. COLLECTOR
3 .EMITTER
ELECTRICAL CHARACTERISTICS ( Ta=25℃ unless otherwise specified )
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE (sat)
VBE (sat)
fT
IC = 100μA, IE=0
IC = 10mA, IB=0
IE= 100μA, IC=0
VCB= 40 V, IE=0
VCE= 30 V, IB=0
VEB= 6 V, IC=0
VCE= 2 V, IC= 1A
IC= 2A, IB= 0.2 A
IC= 2A, IB= 0.2 A
VCE= 5V, IC=0.1A
f =10MHz
40
30
5
60
Typ
90
CLASSIFICATION OF hFE
Rank
R
Range
60-120
O
100-200
Y
160-320
Max Unit
V
V
V
1 µA
10 µA
1 µA
400
0.5 V
1.5 V
MHz
GR
200-400
C,Apr,2013
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet D882M.PDF ] | |
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