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2SC1583 Datasheet PDF - JCET

Part Number 2SC1583
Description DUAL TRANSISTOR
Manufacturers JCET 
Logo JCET Logo 

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate Transistors
2SC1583 DUAL TRANSISTOR (NPN+NPN)
FEATURE
Excellent Linearity of DC Gain
Low Noise  
High hFE
APPLICATION
Differential Amplifier Circuit
Pre-amplification Circuit
Noise Suppression Circuit
Voice Control Circuit
SOT-23-6L
MARKING
Equivalent Circuit
PIN1
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Value
50
50
5
0.1
0.35
357
150
-55+150
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage differential
DC current gain ratio
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
|VBE1-VBE2|
hFE1/hFE2*
fT
Cob
Noise figure
NF
* The lower hFE of two components as hFE1.
Test condition
IC=10µA, IE=0
IC=100µA, IB=0
IE=10µA, IC=0
VCB=35V, IE=0
VCE=35V, IB=0
VEB=2V, IC=0
VCE=2V, IC=1mA
IC=10mA, IB=1mA
VCE=6V,IC=1mA
VCE=6V,IC=1mA
VCE=6V,IC=1mA
VCB=6V, IE=0, f=1MHz
VCE=6V, IE=-0.1mA,
f=1kHz, RG=10 k
Min Typ
50
50
5
250
0.8
150
2.5
0.5
www.cj-elec.com
1
Unit
V
V
V
A
W
/W
Max Unit
V
V
V
0.1 µA
10 µA
0.1 µA
600
0.6 V
10 mV
1
MHz
pF
dB
C,May,2015



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