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PDF STGWA75M65DF2 Data sheet ( Hoja de datos )
| Número de pieza | STGWA75M65DF2 | |
| Descripción | Trench gate field-stop IGBT | |
| Fabricantes | STMicroelectronics | |
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STGW75M65DF2,
STGWA75M65DF2
Trench gate field-stop IGBT, M series 650 V, 75 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.65 V (typ.) @ IC = 75 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. The devices are part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGW75M65DF2
STGWA75M65DF2
Table 1: Device summary
Marking
Package
G75M65DF2
TO-247
TO-247 long leads
Packing
Tube
June 2016
DocID028695 Rev 2
This is information on a product in full production.
1/17
www.st.com
1 page  
STGW75M65DF2, STGWA75M65DF2
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Ets
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
tsc Short-circuit withstand time
47 - ns
22.4 -
ns
VCE = 400 V, IC = 75 A,
VGE = 15 V, RG = 3.3 Ω
(see Figure 29: " Test
circuit for inductive load
switching" )
2680 - A/µs
125 -
ns
93 - ns
0.69 - mJ
2.54 - mJ
3.23 - mJ
48 - ns
25 - ns
VCE = 400 V, IC = 75 A,
VGE = 15 V, RG = 3.3 Ω
TJ = 175 °C (see Figure
29: " Test circuit for
inductive load switching" )
2420 - A/µs
125 -
ns
167 -
ns
2.17 - mJ
3.45 - mJ
VCC ≤ 400 V, VGE = 13 V,
TJstart ≤ 150 °C
VCC ≤ 400 V, VGE = 15 V,
TJstart ≤ 150 °C
5.62
10
-
-
6
mJ
µs
Notes:
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
Symbol
Table 7: Diode switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
trr Reverse recovery time
- 165 -
ns
Qrr Reverse recovery charge
IF = 75 A, VR = 400 V,
- 1.72 - µC
Irrm Reverse recovery current VGE = 15 V (see Figure 29: " - 25 - A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
Test circuit for inductive load
switching") di/dt = 1000 A/µs
-
750
- A/µs
Err Reverse recovery energy
- 289 -
µJ
trr Reverse recovery time
- 256 -
ns
Qrr Reverse recovery charge
IF = 75 A, VR = 400 V,
- 6.85 - µC
Irrm Reverse recovery current
VGE = 15 V TJ = 175 °C
(see Figure 29: " Test circuit
-
48
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
for inductive load switching")
di/dt = 1000 A/µs
-
300
- A/µs
Err Reverse recovery energy
- 1033 -
µJ
DocID028695 Rev 2
5/17
5 Page 
STGW75M65DF2, STGWA75M65DF2
3 Test circuits
Figure 29: Test circuit for inductive load
switching
AA
C
G
L=100 µF
EB
B
C
G D.U.T
3.3
µF
+ RG
E
-
1000
µF
VCC
AM01504v 1
Test circuits
Figure 30: Gate charge test circuit
VCC
12 V
47 kΩ
100 nF
1 kΩ
Vi
≤
V
GMAX
2200
µF
P 1 kΩ
W
IG=CONST
2.7 kΩ
47 kΩ
100 Ω
D.U.T.
VG
AM01505v1
Figure 31: Switching waveform
Figure 32: Diode reverse recovery waveform
DocID028695 Rev 2
11/17
11 Page | ||
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