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What is FQP12N65C?

This electronic component, produced by the manufacturer "HAOHAI", performs the same function as "N-Channel MOSFET".


FQP12N65C Datasheet PDF - HAOHAI

Part Number FQP12N65C
Description N-Channel MOSFET
Manufacturers HAOHAI 
Logo HAOHAI Logo 


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No Preview Available ! FQP12N65C datasheet, circuit

12A, 650V, N沟道 场效应晶体管 产品参数规格书
工业型号
FQP12N65C
FQPF12N65C
公司型号
H12N65P
H12N65F
通俗命名
12N65
H
HAOHAI
封装标识
P: TO-220AB
F: TO-220FP
包装方式
条管装
盒装箱装
每管数量
50Pcs
12N65 Series
N-Channel MOSFET
每盒数量
1000Pcs
每箱数量
5000Pcs
Features
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge: 38nC(Typ.)
 Extended Safe Operating Area
 Lower RDS(ON): 0.67(Typ.) @ VGS=10V
 100% Avalanche Tested
 Package: TO-220AB & TO-220F
ID=12A
BVDSS=650V
RDS(on)=0.67
■特点
 导通电阻低、开关速度快、驱动简单、可并联使用、输入阻抗高、符合RoHS规范
■应用范围
 开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源、
 各种充电器、电子整流器、电子变压器、逆变器、控制器、转换器、
 风扇控制板、以及电源适配器、汽车稳压器等线性放大和功率开关电路
■封装形式
 TO-220P TO-220AB(半塑封)
 TO-220F TO-220FP(全塑封)
12N65 Series Pin Assignment
3-Lead Plastic TO-220AB
Package Code: P
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
2D
Series Symbol: 1 G
3S
Absolute Maximum RatingsTC=25unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain CurrentContinuous (TC=25)
Drain CurrenContinuous (TC=100)
IDM Drain Current – Pulsed (Note 1)
VGS Gate-Source Voltage
EAS Single Pulsed Avalanche Energy (Note 2)
IAR Avalanche Current (Note 1)
EAR Repetitive Avalanche Energy (Note 1)
dv/dt
Peak Diode Recovery dv/dt (Note 3)
PD
Power Dissipation (TC=25)
Power Dissipation - Derate above 25
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
  * Drain current limited by maximum junction temperature TO-220F
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
TO-220AB
Typ.
Max.
-- 0.56
0.5 --
-- 62.5
Value
TO-220AB TO-220F
650 600
12 12*
7.4 7.4*
48 48*
±30 ±30
860 870
12 12
22.5 22.5
4.5 4.5
225 51
1.78 0.41
-50 ~ +150
300
TO-220F
Typ.
Max.
-- 2.43
-- --
-- 62.5
Units
V
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
1页 共7
致力於中國功率器件優秀供應商
H12N65C-PF-BDB

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FQP12N65C equivalent
12A, 650V, N沟道 场效应晶体管 产品参数规格书
Fig-12. Gate Charge Test Circuit & Waveform
12N65 Series
N-Channel MOSFET
Fig-13. Resistive Switching Test Circuit & Waveforms
Fig-14. Unclamped Inductive Switching Test Circuit & Waveforms
Fig-15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
5页 共7
致力於中國功率器件優秀供應商
H12N65C-PF-BDB


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FQP12N65C electronic component.


Information Total 7 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
FQP12N65The function is 12A N-Channel MOSFET. Oucan SemiOucan Semi
FQP12N65The function is N-Channel MOSFET. TOBATOBA
FQP12N65CThe function is N-Channel MOSFET. HAOHAIHAOHAI

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