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A1SHB Datasheet PDF - H&M Semiconductor

Part Number A1SHB
Description P-Channel Trench Power MOSFET
Manufacturers H&M Semiconductor 
Logo H&M Semiconductor Logo 



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A1SHB datasheet, circuit
P-Channel Trench Power MOSFET
General Description
The HM2301B uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as -2.5V. This device is suitable for use as a
battery protection or in other switching application.
HM2301B
Features
VDS = -20V,ID =-2.5A
RDS(ON) < 160mΩ @ VGS =-4.5V
RDS(ON) < 230mΩ @ VGS =-2.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
Battery protection
Load switch
Power management
Package Marking and Ordering Information
Device Marking
Device
Device Package
A1SHB
HM2301B
SOT-23
Reel Size
Ø180mm
Table 1. Absolute Maximum Ratings (TA=25)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V
VGS Gate-Source Voltage (VDS=0V)
ID
IDM (pluse)
Drain Current-Continuous
Drain Current-Continuous@ Current-Pulsed (Note 1)
PD Maximum Power Dissipation
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
Table 2. Thermal Characteristic
Symbol
Parameter
RJA
Thermal Resistance, Junction-to-Ambient
Schematic Diagram
SOT-23 top view
Tape width
8mm
Quantity
3000units
Value
-20
±12
-2.5
-10
1
-55 To 150
Unit
V
V
A
A
W
Value
125
Unit
/W
-1-

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A1SHB equivalent
HM2301B
Figure11. Normalized Maximum Transient Thermal Impedance
Square Wave Pluse Duration(sec)
SOT-23 Package Information
-5-

5 Page
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Information Total 5 Pages
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