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A1SHB Datasheet PDF - Bruckewell

Part Number A1SHB
Description P-Channel Enhancement Mode Power MOSFET
Manufacturers Bruckewell 
Logo Bruckewell Logo 



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A1SHB datasheet, circuit
MS23P01S
P-Channel Enhancement Mode Power MOSFET
Description
The MS23P01S uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch or in PWM applications.
General Features
VDS = -20V,ID = -2.6A
RDS(ON) < 160m@ VGS=-2.5V
RDS(ON) < 120m@ VGS=-4.5V
D
G
S
Schematic diagram
High power and current handing capability
Lead free product is acquired
Surface mount package
Marking and pin assignment
Application
PWM applications
Load switch
SC70-3/ SOT-323 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
A1SHB
MS23P01S
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current -Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-20
±12
-2.6
-13
0.9
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
138 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-20V,VGS=0V
Min Typ Max Unit
-20 - V
- - -1 μA
1/6

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1 page
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A1SHB equivalent
MS23P01S
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
5/6

5 Page
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Information Total 6 Pages
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