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Datasheet A1SHB Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | A1SHB | P-Channel Power MOSFE P-Channel Power MOSFE
Production specification
SI2305DS
DESCRIPTION
SI2305DS is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This hight-density process is especially tailored tominimize on-state resistance. These de |  TOPSKY | data |
| 2 | A1SHB | P-Channel 20-V(D-S) MOSFET SHENZHEN YANGJING MICROELECTRONICS CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
SI2301 P-Channel 20-V(D-S) MOSFET
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: A11
SHB
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings (Ta=25℃ unless ot |  YANGJING | mosfet |
| 3 | A1SHB | P-Channel Enhancement mode Field Effect Transistor SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD.
SOT-23 封装半导体场效应管/SOT-23 Plastic-Encapsulate MOSFETS
SLS 2301 (P-Channel Enhancement mode)
印章/MARKING:A1SHB
特点/Features： 1、 开关速度快； 2、 导通电阻低；
用途/Applications： 用于一般开关和低压电源电路� |  SLS SEMICONDUCTOR | transistor |
| 4 | A1SHB | P-Channel Trench Power MOSFET P-Channel Trench Power MOSFET
General Description
The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.
HM2301B
Features
|  H&M Semiconductor | mosfet |
| 5 | A1SHB | P-Channel Enhancement Mode Power MOSFET MS23P01S
P-Channel Enhancement Mode Power MOSFET
Description
The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
General Features
● VDS |  Bruckewell | mosfet |
A1S Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | A1SHB | P-Channel Power MOSFE P-Channel Power MOSFE
Production specification
SI2305DS
DESCRIPTION
SI2305DS is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This hight-density process is especially tailored tominimize on-state resistance. These de TOPSKY data | | |
| 2 | A1SHB | P-Channel 20-V(D-S) MOSFET SHENZHEN YANGJING MICROELECTRONICS CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
SI2301 P-Channel 20-V(D-S) MOSFET
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: A11
SHB
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings (Ta=25℃ unless ot YANGJING mosfet | | |
| 3 | A1SHB | P-Channel Enhancement mode Field Effect Transistor SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD.
SOT-23 封装半导体场效应管/SOT-23 Plastic-Encapsulate MOSFETS
SLS 2301 (P-Channel Enhancement mode)
印章/MARKING:A1SHB
特点/Features： 1、 开关速度快； 2、 导通电阻低；
用途/Applications： 用于一般开关和低压电源电路� SLS SEMICONDUCTOR transistor | | |
| 4 | A1SHB | P-Channel Trench Power MOSFET P-Channel Trench Power MOSFET
General Description
The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.
HM2301B
Features
H&M Semiconductor mosfet | | |
| 5 | A1SHB | P-Channel Enhancement Mode Power MOSFET MS23P01S
P-Channel Enhancement Mode Power MOSFET
Description
The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
General Features
● VDS Bruckewell mosfet | | |
| 6 | A1SHB | P-Channel Enhancement Mode MOSFET FANGJING
P-Channel Enhancement Mode MOSFET
FL2301A
Features
z -20V/-2.5A, RDS(ON)= 90mΩ (typ.) @ VGS= -4.5V RDS(ON)= 120mΩ (typ.) @ VGS= -2.5V
z Super High Dense Cell Design z Reliable and Rugged
Applications
z Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems  FANGJING mosfet | |
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