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PDF LX5514 Data sheet ( Hoja de datos )
| Número de pieza | LX5514 | |
| Descripción | InGaP HBT 2.3 - 2.5 GHz Power Amplifier | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LX5514 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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LX5514
TM ® InGaP HBT 2.3 – 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
The LX5514 is a power amplifier For 20dBm OFDM output power
optimized for WLAN applications in (64QAM, 54Mbps), the PA provides a
the 2.3 – 2.5GHz frequency range. low EVM (Error-Vector Magnitude) of
The power amplifier is implemented 3.0%, and consumes 150mA total DC
as a two-stage monolithic microwave current.
integrated circuit (MMIC) with active The LX5514 is available in a
bias and output pre-matching.
standard 12-pin 2mm x 2mm micro-
The device is manufactured with an lead package (MLP12L). The compact
InGaP/GaAs Heterojunction Bipolar footprint, low profile, and thermal
Transistor (HBT) IC process capability of the MLP package make the
(MOCVD). Power gain of 28dB is LX5514 an ideal solution for medium-
obtained with a low quiescent current gain power amplifier requirements for
of 80mA.
IEEE 802.11b/g applications.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
Advanced InGaP HBT
2.3 – 2.5GHz Operation
Single-Polarity 3.3V Supply
Quiescent Current 80mA
Power Gain 28dB
Total Current 150mA for
POUT=20dBm OFDM
EVM ~3 % 54Mbps / 64QAM
Small Footprint: 2 x 2mm
Low Profile: 0.46mm
APPLICATIONS
IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
LL
Plastic MLPQ
12 pin
RoHS Compliant / Pb-free
LX5514LL
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5514LL-TR)
Copyright © 2004
Rev. 1.0, 2006-06-21
Microsemi
Integrated Products Group
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
2.1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet LX5514.PDF ] | |
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