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PDF 74HC165D Data sheet ( Hoja de datos )
| Número de pieza | 74HC165D | |
| Descripción | 8-Bit Shift Register | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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CMOS Digital Integrated Circuits Silicon Monolithic
74HC165D
74HC165D
1. Functional Description
• 8-Bit Shift Register (P-IN, S-OUT)
2. General
The 74HC165D is a high speed CMOS 8-BIT PARALLEL/SERIAL-IN, SERIAL-OUT SHIFT REGISTER
fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power
dissipation.
It consists of parallel-in or serial-in, serial-out 8-bit shift register with a gated clock inputs. When the SHIFT/
LOAD input is held high, the serial data input is enabled and the eight frip-frops perform serial shifting with
each clock pulse.
When the SHIFT/LOAD input is held low, the parallel data is loaded synchronously into the register at positive
going transition of the clock pulse.
The CK-INH input should be shifted high only when the CK input is held high.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features
(1) High speed: fMAX = 56 MHz (typ.) at VCC = 5 V
(2) Low power dissipation: ICC = 4.0 µA (max) at Ta = 25
(3) Balanced propagation delays: tPLH ≈ tPHL
(4) Wide operating voltage range: VCC(opr) = 2.0 V to 6.0 V
4. Packaging
SOIC16
©2016 Toshiba Corporation
1
Start of commercial production
2016-05
2016-05-26
Rev.2.0
1 page  
11. Absolute Maximum Ratings (Note)
74HC165D
Characteristics
Symbol Note
Rating
Unit
Supply voltage
VCC
-0.5 to 7.0
V
Input voltage
VIN
-0.5 to VCC + 0.5
V
Output voltage
VOUT
-0.5 to VCC + 0.5
V
Input diode current
IIK ±20 mA
Output diode current IOK ±20 mA
Output current
IOUT
±25 mA
VCC/ground current
ICC ±50 mA
Power dissipation
PD 500 mW
Storage temperature
Tstg
-65 to 150
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
12. Operating Ranges (Note)
Characteristics
Symbol
Test Condition
Rating
Supply voltage
VCC
2.0 to 6.0
Input voltage
VIN
0 to VCC
Output voltage
VOUT
0 to VCC
Operating temperature
Topr
-40 to 85
Input rise and fall times
tr,tf VCC = 2.0 V
0 to 1000
VCC = 4.5 V
0 to 500
VCC = 6.0 V
0 to 400
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Unit
V
V
V
ns
©2016 Toshiba Corporation
5
2016-05-26
Rev.2.0
5 Page 
Package Dimensions
74HC165D
Unit: mm
Weight: 0.15 g (typ.)
Nickname: SOIC16
Package Name(s)
©2016 Toshiba Corporation
11
2016-05-26
Rev.2.0
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet 74HC165D.PDF ] | |
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