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PDF 3DA882 Data sheet ( Hoja de datos )
| Número de pieza | 3DA882 | |
| Descripción | NPN Transistor | |
| Fabricantes | JCET | |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3DA882 TRANSISTOR (NPN)
TO – 126
FEATURES
z Low Speed Switching
z Complement to 3CA772
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
30
6
3
1.25
100
150
-55~+150
1. BASE
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
IC=100µA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA,IC=0
Collector cut-off current
ICBO
VCB=40V,IE=0
Collector cut-off current
ICEO
VCE=30V,IB=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
hFE*
VCE(sat)*
VEB=6V,IC=0
VCE=2V, IC=1A
IC=2A,IB=0.2A
Base-emitter saturation voltage
VBE(sat)
IC=2A,IB=0.2A
Transition frequency
fT VCE=5V,IC=0.1A, f=10MHz
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Min Typ Max Unit
40 V
30 V
6V
10 μA
10 μA
10 μA
60 400
0.5 V
1.5 V
50 MHz
CLASSIFICATION OF hFE
RANK
RANGE
R
60-120
O
100-200
Y
160-320
GR
200-400
A,Dec,2010
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 3DA882.PDF ] | |
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