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PDF 3CG8551 Data sheet ( Hoja de datos )
| Número de pieza | 3CG8551 | |
| Descripción | PNP Transistor | |
| Fabricantes | JCET | |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
3CG8551 TRANSISTOR (PNP)
FEATURES
z General Purpose Switching Application
z Complementary to 3DG8051
TO – 92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-50
-40
-5
-2
750
167
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=-100µA,IE=0
-50
V
V(BR)CEO IC=-10mA,IB=0
-40
V
V(BR)EBO IE=-100µA,IC=0
-5
V
ICBO
VCB=-50V,IE=0
-0.1 μA
ICEO
VCE=-40V,IB=0
-2 μA
IEBO VEB=-5V,IC=0
-0.1 μA
hFE VCE=-2V, IC=-0.1A
100 320
VCE(sat)
IC=-1A,IB=-0.1A
-1 V
fT VCE=-10V,IC=-50mA, f=100MHz 150
MHz
A,Dec,2010
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 3CG8551.PDF ] | |
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