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Datasheet 2SB688 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SB688 | Silicon PNP Power Transistors SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB688
DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SD718
APPLICATIONS ·Power amplifier applications ·Recommend for 45~50W audio frequency
amplifier output stage
PINNING PIN 1 2 3
DESCRIPTION
Emitter Colle |  Savantic | transistor |
| 2 | 2SB688 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SD718
APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 45-50W audio frequency amplifier
output |  Inchange Semiconductor | transistor |
| 3 | 2SB688 | PNP Epitaxial Silicon Transistor PNP 硅外延晶体管
PNP Epitaxial Silicon Transistor
R
NPN 三重扩散晶体管
2SB688 SERIES
用途
应用于功率放大器
产品特性
高集电极电压：VCEO=140V (min) VCEO=180V (min)
与 2SD718 互补 推荐用于 45-50W 音响频率放大器输出电路
环保（RoHS） |  JILIN SINO | transistor |
| 4 | 2SB688 | SILICON PNP TRANSISTOR 2SB688(3CA688)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于一般放大和开关电路 Purpose: Designed for use in general-purpose amplifier and switching application.
特点：用于 45-50W 音频功率输出，与 2SD718(3DA718)互补。 Features: Recommend for 45-50W audio f |  LZG | transistor |
| 5 | 2SB688 | POWER TRANSISTORS(8A/120V/80W) A
A
A
|  Mospec Semiconductor | transistor |
2SB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SB030070MLJY | 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB030070MLJY
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur  Silan Microelectronics transistor | | |
| 2 | 2SB035030MLJY | 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB035030MLJY
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035030MLJY is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H Silan Microelectronics transistor | | |
| 3 | 2SB035100ML | 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS 2SB035100ML
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035100ML is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High su Silan Microelectronics transistor | | |
| 4 | 2SB0709A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0709A (2SB709A)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SD0601A (2SD601A) ■ Features
• High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and th  Panasonic Semiconductor transistor | | |
| 5 | 2SB0710 | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
| 6 | 2SB0710A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
| 7 | 2SB0766 | Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A
Unit: mm
s Features
q q
2.6±0.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Panasonic Semiconductor transistor | |
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